Highest output power value achieved with the successful development of diamond semiconductor

2024-05-23

  Known as the "ultimate power semiconductor," the development of power control semiconductors using diamond has made progress. It is reported that Professor Kazuo from Saga University in Japan, in collaboration with precision parts manufacturer Orbray Japan, has developed a power semiconductor made of diamond, operating at 875 megawatts per square centimeter. Among diamond semiconductors, this output power value is the highest in the world and is second only to gallium nitride products at about 2090 megawatts among all semiconductors. Compared to silicon carbide (SiC) and gallium nitride (GaN) products, which are next-generation power semiconductors, diamond semiconductors exhibit excellent high-voltage resistance and other performance characteristics, with power loss believed to be reduced to one fifty-thousandth that of silicon products. Diamond power semiconductors also have strong heat resistance and radiation resistance.

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